公开(公告)号：US10755018B2

公开(公告)日：2020-08-25

申请号：US16102888

申请日：2018-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Kyu Ryu ,  Minsu Kim

IPC: G06F17/50 ,  G06F30/392 ,  H01L29/66 ,  H01L27/02 ,  H01L27/118

Abstract: A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.

公开(公告)号：US10990742B2

公开(公告)日：2021-04-27

申请号：US16933281

申请日：2020-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Kyu Ryu ,  Minsu Kim

IPC: G06F30/30 ,  G06F30/392 ,  H01L29/66 ,  H01L27/02 ,  H01L27/118

Abstract: A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.