公开(公告)号：US11575014B2

公开(公告)日：2023-02-07

申请号：US17227848

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Sung Min Kim ,  Ju Hun Park ,  Myung Yoon Um ,  Jong Mil Youn

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom.