公开(公告)号：US10825893B2

公开(公告)日：2020-11-03

申请号：US16003675

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-ho Cho ,  Sang-yeol Kang ,  Sun-min Moon ,  Young-lim Park ,  Jong-bom Seo

IPC: H01L49/02 ,  H01L21/02 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.