公开(公告)号：US20250038715A1

公开(公告)日：2025-01-30

申请号：US18597461

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwon YUN ,  Jaeyoun JUNG ,  Hyunchul PARK ,  Sangmin YOO ,  Joonhoi HUR

IPC: H03F3/213 ,  H03F1/56 ,  H03F3/24

Abstract: A multi-stack power amplifier having a differential structure includes a first stack including a first amplifier element, configured to amplify a first signal having a first phase, and a second amplifier element configured to amplify a second signal having a second phase opposite to the first phase; and a second stack including a third amplifier element, connected to an output terminal of the first amplifier element through a first interconnection, and a fourth amplifier element connected to an output terminal of the second amplifier element through a second interconnection intersecting the first interconnection.