公开(公告)号：US20200019203A1

公开(公告)日：2020-01-16

申请号：US16447259

申请日：2019-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo Seong KIM ,  Kwang Ho KIM ,  Sang Ho KIM

IPC: G05F3/26

Abstract: Provided are a semiconductor circuit and a semiconductor system. A semiconductor circuit includes a bandgap reference voltage generation circuit including an operational amplifier to amplify a differential voltage between a first node and a second node; a first startup circuit which receives input of an output signal of the operational amplifier from an output voltage node of the bandgap reference voltage generation circuit and pulls up the second node; and a second startup circuit which pulls down the output voltage node.

公开(公告)号：US20220316957A1

公开(公告)日：2022-10-06

申请号：US17562217

申请日：2021-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hyun PARK ,  Kwang Ho KIM ,  Joo Seong KIM ,  Jun Hyeok YANG

IPC: G01K7/16 ,  G01K1/02

Abstract: A temperature sensing device including a first temperature sensor having a first resistor and a first capacitor and generating a first voltage applied to at least one of the first resistor or the first capacitor based on a first clock signal and a second clock signal generated by delaying the first clock signal, a second temperature sensor having a second resistor and a second capacitor and generating a second voltage applied to at least one of the second resistor or the second capacitor based on the first and second clock signals, a controller generating code data based on the first voltage and the second voltage and generating a control signal based on the code data, and a delay locked loop circuit delaying the first clock signal based on the control signal to generate the second clock signal may be provided.