公开(公告)号：US20210273016A1

公开(公告)日：2021-09-02

申请号：US17325134

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Jun SEONG ,  Jun Hwan PAIK ,  Hyung Jong JEONG

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.

公开(公告)号：US20200075852A1

公开(公告)日：2020-03-05

申请号：US16378749

申请日：2019-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Jun SEONG ,  Jun Hwan PAIK ,  Hyung Jong JEONG

IPC: H01L45/00 ,  H01L27/24

Abstract: A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.