公开(公告)号：US20220336365A1

公开(公告)日：2022-10-20

申请号：US17509463

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dayoung LEE ,  Jun-Woo LEE ,  Sungdong CHO

IPC: H01L23/532 ,  H01L23/528

Abstract: A semiconductor device includes a lower structure including a substrate and a cell structure on the substrate and a plurality of interconnection layers, which are stacked on the lower structure in a first direction extending perpendicular to a top surface of the substrate. An uppermost interconnection layer of the plurality of interconnection layers includes uppermost conductive lines. Each of the uppermost conductive lines includes a lower metal compound pattern, a metal pattern, an upper metal compound pattern, and a capping pattern, which are sequentially stacked in the first direction. The lower metal compound pattern, the metal pattern, and the upper metal compound pattern include a same metallic element.

公开(公告)号：US20130227198A1

公开(公告)日：2013-08-29

申请号：US13706565

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Woo LEE

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7208

Abstract: A flash memory device and an electronic device employing thereof are provided for efficiently processing data that is larger than a page size of a data block and for processing data that is smaller than the page size of the data block. The flash memory device preferably includes a plurality of flash arrays therein and the plurality of flash arrays is divided into partitions depending on at least two or more page sizes, thereby advantageously improving the performance of random write.

Abstract translation: 提供了一种闪速存储器件及其采用的电子器件，用于有效地处理大于数据块的页面大小的数据，并且用于处理小于数据块的页面大小的数据。 闪存器件优选地包括多个闪存阵列，并且根据至少两个或更多个页面大小将多个闪存阵列划分成分区，从而有利地提高了随机写入的性能。