公开(公告)号：US20150155163A1

公开(公告)日：2015-06-04

申请号：US14492401

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Jin KIM ,  Young-Su CHO ,  Jung-Sik HA

IPC: H01L21/02 ,  H01L29/78 ,  H01L27/108

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/022 ,  H01L27/10814 ,  H01L27/10894 ,  H01L29/42356 ,  H01L29/7843

Abstract: A semiconductor device includes a structure including a transistor and a capacitor on a substrate, an upper insulation layer covering the structure, a first passivation layer and a second passivation layer. The first passivation layer is formed on the upper insulation layer to prevent or reduce a leakage charge from the capacitor. The second passivation layer is formed on the first passivation layer and has a compressive property.

Abstract translation: 半导体器件包括在衬底上包括晶体管和电容器的结构，覆盖该结构的上绝缘层，第一钝化层和第二钝化层。 第一钝化层形成在上绝缘层上以防止或减少来自电容器的泄漏电荷。 第二钝化层形成在第一钝化层上并具有压缩特性。