公开(公告)号：US20250031376A1

公开(公告)日：2025-01-23

申请号：US18582722

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junil Lee ,  Yongjun Kim ,  Chanho Kim ,  Sangwan Nam ,  Ryoongbin Lee

IPC: H10B43/40 ,  G11C16/30 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device may include a first semiconductor structure including a substrate, an active region in the substrate, a device isolation region defining the active region, and a capacitor structure on the device isolation region and vertically overlapping the device isolation region. The capacitor structure may include a first electrode structure extending in a first direction and including first capacitor electrodes stacked in the first direction, a second electrode structure including second capacitor electrodes stacked in the first direction, and a first insulating structure between the first electrode structure and the second electrode structure. Each of the first capacitor electrodes and the second capacitor electrodes are alternately arranged and spaced apart from each other in a second direction parallel to an upper surface of the substrate, extend in a third direction perpendicular to the first direction and the second direction, and has a plate shape.