公开(公告)号：US10854677B2

公开(公告)日：2020-12-01

申请号：US16565553

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taek Soo Jeon ,  Kee Won Kim ,  Sang Hoon Uhm ,  Ki Joong Yoon ,  Ha Jin Lim

IPC: H01L27/28 ,  H01L27/30

Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.