公开(公告)号：US11775215B2

公开(公告)日：2023-10-03

申请号：US17395027

申请日：2021-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Ki Lee ,  Joo Young Hwang ,  Jun Hee Kim ,  Keun San Park ,  Je Kyeom Jeon

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: Provided is a storage device including a non-volatile memory including a first memory block and a second memory block different from the first memory block, and a memory controller configured to receive, from a host, a first write mode command corresponding to the first memory block and a second write mode command corresponding to the second memory block, control the first memory block to perform a first write operation according to the first write mode command, and control the second memory block to perform a second write operation according to the second write mode command, both the first write operation and the second write operation being sequential write operations.

公开(公告)号：US20220156008A1

公开(公告)日：2022-05-19

申请号：US17395027

申请日：2021-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Ki Lee ,  Joo Young Hwang ,  Jun Hee Kim ,  Keun San Park ,  Je Kyeom Jeon

IPC: G06F3/06

Abstract: Provided is a storage device including a non-volatile memory including a first memory block and a second memory block different from the first memory block, and a memory controller configured to receive, from a host, a first write mode command corresponding to the first memory block and a second write mode command corresponding to the second memory block, control the first memory block to perform a first write operation according to the first write mode command, and control the second memory block to perform a second write operation according to the second write mode command, both the first write operation and the second write operation being sequential write operations.