-
公开(公告)号：US20250054866A1
公开(公告)日：2025-02-13
申请号：US18796804
申请日：2024-08-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keun Wook SHIN , Sangwon KIM , Chang Seok LEE , Joonseok KIM , Joonyun KIM , Giyoung JO , Luhing HU
IPC: H01L23/532 , H01L23/528
Abstract: Disclosed are an interconnect structure including a substrate, a metal layer on the substrate, and a passivation layer including a topological compound and in contact with the metal layer.
Search Results
1
records
(took 0.011 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
