公开(公告)号：US20150333196A1

公开(公告)日：2015-11-19

申请号：US14558384

申请日：2014-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwoo KIM ,  Kyungsik SHIN ,  Hye-Jung PARK ,  Eunbi CHO

IPC: H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/032 ,  H01L31/022408 ,  H01L31/0324 ,  H01L31/04 ,  H01L31/08 ,  Y02E10/50

Abstract: Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

Abstract translation: 示例实施例涉及光电器件。 光电子器件可以包括在第一和第二电极之间的光敏层，以及对应于第一和第二电极中的至少一个的铁电层。 第一和第二电极中的至少一个可以包括石墨烯。 光活性层可以包括二维（2D）半导体。 光电子器件还可以包括第三电极，并且在这种情况下，铁电层可以在第二电极和第三电极之间。 第二电极，铁电体层和第三电极可以构成纳米发生器。