公开(公告)号：US20200303544A1

公开(公告)日：2020-09-24

申请号：US16533073

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Chong PARK ,  Jun Gu Kang ,  Yong Sang Jeong

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/06

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate electrode on the substrate, an element isolation film in the substrate and spaced apart from the gate electrode, an impurity region between the element isolation film and the gate electrode, the impurity region including a first impurity of a first concentration, and a depletion buffer region on at least a part of side walls of the element isolation film, the depletion buffer region including a second impurity of a second concentration higher than the first concentration, a conductivity type of the second impurity being the same as a conductivity type of the first impurity.