公开(公告)号：US10115722B2

公开(公告)日：2018-10-30

申请号：US15478234

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-chul Oh ,  Sejin Park

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises forming active patterns on a substrate that includes first and second logic cell regions adjacent to each other in a first direction, and forming on the substrate a device isolation layer exposing upper portions of the active patterns. The forming the active patterns comprises forming first line mask patterns extending parallel to each other in the first direction and running across the first and second logic cell regions, forming on the first line mask patterns an upper separation mask pattern including a first opening overlapping at least two of the first line mask patterns, forming first hardmask patterns from the at least two first line mask patterns, and etching the substrate to form trenches defining the active patterns.