公开(公告)号：US20220375982A1

公开(公告)日：2022-11-24

申请号：US17564308

申请日：2021-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Jun Choi ,  Wonoh Ryu ,  Gyuhyun Lim ,  Myungjo Jung

IPC: H01L27/146

Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor comprises a substrate including a plurality of pixels, a photoelectric conversion region in the substrate at each of the pixels, a gate electrode on the substrate at each of the pixels, an interlayer dielectric layer on the substrate and the gate electrode, and a contact penetrating the interlayer dielectric layer and on the gate electrode. The contact includes a lower part on the gate electrode and an upper part on the lower part and connected to a wiring line on the interlayer dielectric layer. A planar shape of the lower part of the contact is larger than that of the upper part of the contact.