公开(公告)号：US20240038708A1

公开(公告)日：2024-02-01

申请号：US18120026

申请日：2023-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： KUNSANG PARK ,  HO-JIN LEE ,  SEOKHO KIM

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L24/11 ,  H01L24/13 ,  H01L24/80 ,  H01L2224/11452 ,  H01L2224/13016 ,  H01L2224/13147 ,  H01L2224/13187 ,  H01L2224/16145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A semiconductor device may include a lower structure including a first substrate, a first pad on the first substrate, and a first insulating layer enclosing the first pad, and an upper structure including a second substrate, a second pad on the second substrate, and a second insulating layer enclosing the second pad. Each of the first and second pads may include a first portion and a second portion on the first portion. The second portion may include the same metallic material as the first portion. The second portion of the first pad may be in contact with the second portion of the second pad, and the first insulating layer may be in contact with the second insulating layer.