公开(公告)号：US20210343750A1

公开(公告)日：2021-11-04

申请号：US17154583

申请日：2021-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOHYEON LEE ,  SUNGSU MOON ,  JAEDUK LEE ,  IKHYUNG JOO

IPC: H01L27/12 ,  H01L21/84

Abstract: A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first source/drain region in the active region on first and second sides of the first channel region; a gate structure having a first gate insulating film, a shared gate electrode, and a second gate insulating film, sequentially arranged on the active region; a cover semiconductor layer on the second gate insulating film and electrically separated from the active region to provide a second channel region; a second source/drain. region in the cover semiconductor layer on first and second sides of the second channel region first and second source/drain contacts respectively connected to the first and second source/drain regions; and a shared gate contact connected to the shared gate electrode.