公开(公告)号：US20160172418A1

公开(公告)日：2016-06-16

申请号：US14956879

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hoon KIM ,  Sang il Jung

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1463

Abstract: Methods of manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, include forming, in a semiconductor substrate, at least one device isolation layer defining an active area; forming at least one gate dielectric layer on the active area; forming at least one gate on the active area and the at least one device isolation layer, wherein first conductive-type impurity ions are injected into the at least one gate; and injecting second conductive-type impurity ions into portions of the at least one gate arranged on the at least one device isolation layer and edges of the active area adjacent to the at least one device isolation layer.

Abstract translation: 制造互补金属氧化物半导体（CMOS）图像传感器的方法包括在半导体衬底中形成至少一个限定有源区的器件隔离层; 在所述有源区上形成至少一个栅介质层; 在有源区和至少一个器件隔离层上形成至少一个栅极，其中第一导电型杂质离子注入至少一个栅极; 以及将第二导电型杂质离子注入到布置在所述至少一个器件隔离层上的所述至少一个栅极和与所述至少一个器件隔离层相邻的有源区域的边缘的部分中。