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公开(公告)号:US10149067B2
公开(公告)日:2018-12-04
申请号:US14966405
申请日:2015-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Wook Kim , Young-Joon Choi , Jong-Hee Han
IPC: H04R25/00
Abstract: A method and apparatus for operating an electronic device may include: acquiring the battery status information of two or more element devices, and determining whether the battery status information satisfies a reference condition. A function of at least one device among the two or more element devices is controlled based on the information such as the battery status information.
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公开(公告)号:US09519543B2
公开(公告)日:2016-12-13
申请号:US14628959
申请日:2015-02-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Wook Kim , Seon Min Rhee , Yong Beom Lee
CPC classification number: G06F11/1402 , G06F17/30153 , G06F17/30247 , G06K9/46 , G06K9/4671
Abstract: A method and an apparatus search an image using a feature point. The image search method extracts at least one feature point from an image and describes the extracted at least one feature point in stages, thereby generating a hierarchical feature point descriptor. In addition, the method may search for information matching the feature point descriptor from a local database (DB) included in a terminal or a remote DB included in a server.
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公开(公告)号:US11415896B2
公开(公告)日:2022-08-16
申请号:US16369932
申请日:2019-03-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang-Wook Kim
Abstract: In a dissection method for layout patterns in a semiconductor device, a design layout is divided into a plurality of patches. A plurality of first dissection points for target layout patterns in the target patch and neighboring layout patterns in the neighboring patches are set based on vertexes of the target and neighboring layout patterns. At least one second dissection point for at least one exceptional layout pattern is set. The at least one exceptional layout pattern is a layout pattern in which the first dissection points are not set and which extends to pass through boundaries of one patch. A plurality of third dissection points for the target layout patterns and the neighboring layout patterns are set based on the first and second dissection points. The target layout patterns are divided into a plurality of target segments based on the first, second and third dissection points.
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