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1.
公开(公告)号:US20170256070A1
公开(公告)日:2017-09-07
申请号:US15409922
申请日:2017-01-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woongkyu Son , Sangkyo Lim , Sunhee Shim , MiJung Jeon
CPC classification number: G06T7/62 , G06T5/003 , G06T5/50 , G06T7/001 , G06T2207/10061 , G06T2207/10148 , G06T2207/20016 , G06T2207/20221 , G06T2207/30148
Abstract: A method of inspecting a sample includes performing a focusing operation on a target pattern of a sample. The focusing operation includes scanning the target pattern at different focusing levels to obtain a plurality of focus images. The method further includes using at least one of the plurality of the focus images as a target pattern image of the target pattern and then measuring a dimension of the target pattern based on the target pattern image.
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公开(公告)号:US11183363B2
公开(公告)日:2021-11-23
申请号:US16821249
申请日:2020-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongmin Cho , Taeyong Lee , Sangkyo Lim
IPC: H01J37/28 , H01J37/244 , H01J37/22 , H01J37/21 , H01J37/20
Abstract: A scanning electron microscope apparatus including an electron gun configured to generate an electron beam, a focusing lens configured to concentrate the electron beam from the electron gun, an electron detector configured to detect signals emitted from a sample in response to the electron beam incident on the sample, a stage configured to receive the sample thereon, and a focus calibration structure on an upper part of the stage.
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3.
公开(公告)号:US10198827B2
公开(公告)日:2019-02-05
申请号:US15409922
申请日:2017-01-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woongkyu Son , Sangkyo Lim , Sunhee Shim , MiJung Jeon
Abstract: A method of inspecting a sample includes performing a focusing operation on a target pattern of a sample. The focusing operation includes scanning the target pattern at different focusing levels to obtain a plurality of focus images. The method further includes using at least one of the plurality of the focus images as a target pattern image of the target pattern and then measuring a dimension of the target pattern based on the target pattern image.
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