公开(公告)号：US09754817B2

公开(公告)日：2017-09-05

申请号：US15170043

申请日：2016-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil-Ho Lee ,  Se-Woong Park ,  Ki-Joon Kim

IPC: H01L21/02 ,  H01L21/30 ,  H01L29/06 ,  H01L33/00 ,  H01L27/10 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/7681 ,  H01L21/76804 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.