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公开(公告)号：US11411052B2
公开(公告)日：2022-08-09
申请号：US17122070
申请日：2020-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhwa Kim , Sejung Park , Junghun Kim , Sangsu Park , Kyungrae Byun , Beom Suk Lee
Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
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公开(公告)号：US20210104577A1
公开(公告)日：2021-04-08
申请号：US17122070
申请日：2020-12-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhwa Kim , Sejung Park , Junghun Kim , Sangsu Park , Kyungrae Byun , Beom Suk Lee
Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
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