公开(公告)号：US09330981B2

公开(公告)日：2016-05-03

申请号：US14460081

申请日：2014-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hyun-pil Noh ,  Choong-ho Lee ,  Seog-heon Ham

IPC: H01L21/77 ,  H01L21/8236 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/66 ,  H01L27/00 ,  H01L25/00

CPC classification number: H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract translation: 提供了包括高压晶体管和低压晶体管的半导体器件及其制造方法。 半导体器件包括：包括高电压区域和低电压区域的半导体衬底; 形成在高电压区域中并包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极的高压晶体管; 以及形成在所述低电压区域中并包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极的低电压晶体管。 第二源极/漏极区域的厚度小于第一源极/漏极区域的厚度。

公开(公告)号：US20150029355A1

公开(公告)日：2015-01-29

申请号：US14334070

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-jun Kim ,  Won-baek Lee ,  Byung-jo Kim ,  Sung-ho Suh ,  Jin-ho Seo ,  Young-tae Jang ,  Seog-heon Ham ,  Jin-kyeong Heo

IPC: H04N5/232

CPC classification number: H04N5/23229 ,  H04N5/3742 ,  H04N9/045 ,  H04N2209/047

Abstract: A pixel array includes pixels arranged in a grid, with separate readout paths configured to readout image data from different subsets of the pixels in the array. An image sensor may employ image data from one subset of pixels, which may include fewer pixels than another subset of pixels in the array, to quickly form an image.

Abstract translation: 像素阵列包括布置在网格中的像素，其中单独的读出路径被配置为从阵列中的像素的不同子集读出图像数据。 图像传感器可以采用来自像素子集的图像数据，其可以包括比阵列中的另一子像素更少的像素，以快速形成图像。