公开(公告)号：US20230055450A1

公开(公告)日：2023-02-23

申请号：US17841858

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Min CHOO ,  Hyuk Woo KWON ,  Dong Woo KIM ,  Byoung Deog CHOI

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.