公开(公告)号：US10163518B2

公开(公告)日：2018-12-25

申请号：US15716404

申请日：2017-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jun Yoon ,  Il-han Park ,  Na-young Choi ,  Seung-hwan Song

IPC: G11C16/28 ,  G11C16/04 ,  G11C16/30 ,  G11C16/08 ,  G11C16/26

Abstract: Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.