公开(公告)号：US20240395649A1

公开(公告)日：2024-11-28

申请号：US18640201

申请日：2024-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chulmin CHOI ,  Nambin KIM ,  Samki KIM ,  Taehun KIM ,  Seungjae BAIK ,  Jaeduk LEE

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/522 ,  H10B12/00

Abstract: Provided is a semiconductor device including a semiconductor substrate, a gate stack including a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate, a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction, a word line cut penetrating through the gate stack and extending in the vertical direction, a passivation layer disposed on the gate stack, and a string select line stack disposed on the passivation layer, wherein the passivation layer includes a first passivation layer containing a passivation element and a second passivation layer having a smaller content of the passivation element than the first passivation layer.