公开(公告)号：US20190181062A1

公开(公告)日：2019-06-13

申请号：US16035991

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Ik PARK ,  Bong Seok KIM ,  Souk KIM ,  Yu Sin YANG ,  Soo Seok LEE

IPC: H01L21/66 ,  H01L21/78 ,  H01L21/762

CPC classification number: H01L22/26 ,  H01L21/76224 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.

公开(公告)号：US20170169558A1

公开(公告)日：2017-06-15

申请号：US15291590

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Soo KIM ,  Jin Kwan KIM ,  Chung Sam JUN ,  Yu sin YANG ,  Soo Seok LEE

IPC: G06T7/00 ,  H01J37/28 ,  G01Q30/02 ,  G06T7/50 ,  G06K9/46

CPC classification number: G06T7/0004 ,  G01Q30/02 ,  G06K9/4604 ,  G06T7/41 ,  G06T7/50 ,  G06T7/529 ,  G06T2207/10028 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/225 ,  H01J2237/281

Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.