公开(公告)号：US20240006435A1

公开(公告)日：2024-01-04

申请号：US18311401

申请日：2023-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeong Eun KWAK ,  Yeon Woo Kim ,  Sook Young Roh ,  Junwon Han ,  Seok Ho Yun ,  Ki-Ryong Lee

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14685 ,  G02B1/11

Abstract: An image sensor with improved performance is provided. The image sensor includes a substrate, a prism structure on the substrate, the prism structure including at least one nanopattern, and an anti-reflection structure on the prism structure, the anti-reflection structure including at least one opening array, the opening array including a plurality of spaced-apart openings.