公开(公告)号：US10763163B2

公开(公告)日：2020-09-01

申请号：US16242122

申请日：2019-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-jeong Park ,  Dong-chan Lim ,  Kwang-jin Moon ,  Ju-bin Seo ,  Ju-il Choi ,  Atsushi Fujisaki

IPC: H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.

公开(公告)号：US11488860B2

公开(公告)日：2022-11-01

申请号：US16938259

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-jeong Park ,  Dong-chan Lim ,  Kwang-jin Moon ,  Ju-bin Seo ,  Ju-Il Choi ,  Atsushi Fujisaki

IPC: H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.