公开(公告)号：US09613966B2

公开(公告)日：2017-04-04

申请号：US14697782

申请日：2015-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-ik Kim ,  Hyoung-sub Kim ,  Sung-eui Kim

IPC: H01L27/108

CPC classification number: H01L27/10855 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10823 ,  H01L27/10885 ,  H01L27/10888

Abstract: A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.

公开(公告)号：US10037999B2

公开(公告)日：2018-07-31

申请号：US14591732

申请日：2015-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-ik Kim ,  Hyoung-sub Kim ,  Sung-eui Kim ,  Hoon Jeong

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/108

CPC classification number: H01L27/10885 ,  H01L27/10855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.