公开(公告)号：US08890141B2

公开(公告)日：2014-11-18

申请号：US13671081

申请日：2012-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC: H01L29/12 ,  H01L29/786

CPC classification number: H01L29/7869

Abstract: Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

Abstract translation: 晶体管及其制造方法。 晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。