公开(公告)号：US20190051665A1

公开(公告)日：2019-02-14

申请号：US16165426

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Gn YUN ,  Sunghoi HUR ,  Jaesun YUN ,  Joon-Sung LIM

IPC: H01L27/11582 ,  H01L27/11575 ,  H01L27/11573

Abstract: A semiconductor device may include a cell gate conductive pattern in a cell array area that extends to a step area, a cell vertical structure in the cell array area that extends through the cell gate conductive pattern, a cell gate contact structure on the cell gate conductive pattern in the step area, a cell gate contact region in the cell gate conductive pattern and aligned with the cell gate contact structure, a first peripheral contact structure spaced apart from the cell gate conductive pattern, a second peripheral contact structure spaced apart from the first peripheral contact structure, a first peripheral contact region under the first peripheral contact structure, and a second peripheral contact region under the second peripheral contact structure. The cell gate contact region may include a first element and a remainder of the cell gate conductive pattern may not substantially include the first element.

公开(公告)号：US20210151467A1

公开(公告)日：2021-05-20

申请号：US17162526

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Gn YUN ,  Sunghoi HUR ,  Jaesun YUN ,  Joon-Sung LIM

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11575

Abstract: A semiconductor device may include a cell gate conductive pattern in a cell array area that extends to a step area, a cell vertical structure in the cell array area that extends through the cell gate conductive pattern, a cell gate contact structure on the cell gate conductive pattern in the step area, a cell gate contact region in the cell gate conductive pattern and aligned with the cell gate contact structure, a first peripheral contact structure spaced apart from the cell gate conductive pattern, a second peripheral contact structure spaced apart from the first peripheral contact structure, a first peripheral contact region under the first peripheral contact structure, and a second peripheral contact region under the second peripheral contact structure. The cell gate contact region may include a first element and a remainder of the cell gate conductive pattern may not substantially include the first element.