公开(公告)号：US20240204013A1

公开(公告)日：2024-06-20

申请号：US18512341

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjun IN ,  Sungchul KIM ,  Jaeho KIM

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/1463

Abstract: An image sensor includes a substrate having a plurality of pixels. Each pixel includes a photoelectric conversion region and a floating diffusion region in the substrate, a pixel transistor including a pixel gate on the first surface of the substrate, a first transmission gate between the photoelectric conversion region and the floating diffusion region, extending into the substrate, and having a first width in a horizontal direction, and a second transmission gate between the photoelectric conversion region and the floating diffusion region, arranged between the pixel gate and the first transmission gate when viewed in a plan view, and having a second width less than the first width in the horizontal direction.