公开(公告)号：US20240387589A1

公开(公告)日：2024-11-21

申请号：US18430367

申请日：2024-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Eun KIM ,  Soon-Im BAE ,  Woo Jae KANG ,  Keo-Sung PARK ,  Hak Jin LEE

IPC: H01L27/146

Abstract: There is provided an image sensor in which a leakage current caused by an anti-reflection layer is attenuated. The image sensor includes a first region and a second region in the periphery of the first region, the image sensor including a substrate including a light-receiving surface on which light is incident, a photoelectric conversion region in the substrate within the first region, a first anti-reflection layer extended along the light-receiving surface within the first region, the first anti-reflection layer including a conductive material layer, a second anti-reflection layer extended along the light-receiving surface within the second region, the second anti-reflection layer not including the conductive material layer, and a conductive pattern, at least a portion of the conductive pattern is disposed on the second anti-reflection layer and a second portion of the conductive pattern passes through the second anti-reflection layer.