公开(公告)号：US20200303284A1

公开(公告)日：2020-09-24

申请号：US16722418

申请日：2019-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Sung YANG ,  Joon-Sung LIM ,  Sung-Min HWANG ,  Ji-Young KIM ,  Ji-Won KIM

IPC: H01L23/48 ,  H01L27/11575 ,  H01L27/11582

Abstract: A vertical semiconductor device including a plurality of vertical memory cells on an upper surface of a first substrate, an adhesive layer on a lower surface of the first substrate that is opposite to the upper surface of the first substrate, a second substrate having first peripheral circuits thereon, a lower insulating interlayer on the second substrate, and a plurality of wiring structures electrically connecting the vertical memory cells and the first peripheral circuits. A lower surface of the adhesive layer and an upper surface of the lower insulating interlayer may be in contact with each other.