公开(公告)号：US20250126788A1

公开(公告)日：2025-04-17

申请号：US18653158

申请日：2024-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Kwon ,  Yong Sik Chung

IPC: H10B43/27 ,  H01L23/522

Abstract: A semiconductor device includes a substrate including a circuit region and a cell region. The cell region includes a gate stacking structure, a channel structure that extends into the gate stacking structure and is on the cell array region, a through-gate contact portion that extends into the gate stacking structure and is electrically connected to a connection gate electrode, and an upper gate contact portion that is electrically connected to an upper gate electrode, where the upper gate electrode is separated from the substrate by a first distance, the connection gate electrode is separated from the substrate by a second distance, and where the second distance is less than the first distance, and where the upper gate contact portion includes a first portion and a second portion, and a boundary between the first portion and the second portion has a step shape.