公开(公告)号：US20180350779A1

公开(公告)日：2018-12-06

申请号：US16050341

申请日：2018-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won CHOI ,  Won-keun KIM ,  Myung-sung KANG ,  Gwang-sun SEO

IPC: H01L25/065

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

公开(公告)号：US20180012866A1

公开(公告)日：2018-01-11

申请号：US15435286

申请日：2017-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-won CHOI ,  Won-keun KIM ,  Myung-sung KANG ,  Gwang-sun SEO

IPC: H01L25/065

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.