公开(公告)号：US20250016981A1

公开(公告)日：2025-01-09

申请号：US18653157

申请日：2024-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhwan Choi ,  Masayuki Terai

IPC: H10B12/00

Abstract: An integrated circuit memory device includes a substrate having a bit line thereon, and a channel structure extending on the bit line. The channel structure includes a horizontal portion on the bit line and a vertical channel portion extending upwardly from one end of the horizontal portion. A word line is provided, which extends opposite the horizontal portion and crosses the bit line to extend in a second horizontal direction, which intersects the first horizontal direction. A landing pad structure is provided, and is electrically connected to the vertical channel portion. The landing pad structure includes a first contact portion in contact with an upper surface of the vertical channel portion and a second contact portion protruding downwardly from a lower surface of the first contact portion.