公开(公告)号：US10811107B2

公开(公告)日：2020-10-20

申请号：US16531926

申请日：2019-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Ho Na ,  Young Sun Min ,  Dae Seok Byeon

IPC: G11C16/30 ,  G11C5/14 ,  G11C16/04 ,  H03F3/45 ,  G11C16/08

Abstract: Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes an external power supply voltage terminal configured to receive an external power supply voltage, an external ground voltage terminal configured to receive an external ground voltage, a ground voltage noise detector configured to detect a difference between the external ground voltage and an internal ground voltage of an internal ground voltage node and generate a ground voltage noise reference voltage, an internal power supply voltage reference voltage generator configured to generate an internal power supply voltage reference voltage based on the external power supply voltage and the ground voltage noise reference voltage, and an internal power supply voltage driver configured to generate an internal power supply voltage based on the internal power supply voltage reference voltage.