公开(公告)号：US20240431105A1

公开(公告)日：2024-12-26

申请号：US18748242

申请日：2024-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Sik Lee ,  Yeon Su Kim ,  Hwan Chul Jeon

IPC: H10B43/27

Abstract: A semiconductor memory device and electronic system including the same are provided. The semiconductor memory device may include a first stacked structure including a plurality of first interlayer insulating films, a second stacked structure including a plurality of second interlayer insulating films on the first stacked structure, and a hole that extends into the first stacked structure and the second stacked structure. The plurality of second interlayer insulating films may include a plurality of first films that include first impurities, and a plurality of second films that are free of the first impurities.