公开(公告)号：US20210250410A1

公开(公告)日：2021-08-12

申请号：US17162488

申请日：2021-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mooserk PARK ,  Youngmin KO ,  Jeahwan GO ,  Ara CHO ,  Changjoo CHAI ,  Miyoung YOO

IPC: H04L29/08

Abstract: An electronic apparatus and a controlling method thereof are provided. A server apparatus communicatively connected with a plurality of electronic apparatuses constituting an internet of things (IoT) includes a communication interface, and a processor configured to, based on receiving a request of a service from an application executed in a user terminal apparatus being received through the communication interface, determine data corresponding to the request and an electronic apparatus for receiving the data among the plurality of electronic apparatuses, determine a time cycle for receiving the data from the electronic apparatus based on the service, control the communication interface to transmit a request for transmitting the data according to the time cycle to the electronic apparatus, and based on receiving the data from the electronic apparatus at an interval of the time cycle through the communication interface, in response to the request for transmission, provide the service based on the received data.

公开(公告)号：US20250048650A1

公开(公告)日：2025-02-06

申请号：US18653139

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulji SONG ,  Youngmin KO ,  Hodae KIM

IPC: H10B63/00

Abstract: A semiconductor device includes first and second conductive lines respectively extending in first and second directions on a substrate. Cell structures are respectively between the first and second conductive lines and include first and second electrodes and a selector layer. First capping layers cover side surfaces of the first conductive lines and first side surfaces of the cell structures in the second direction. First interlayer insulating layers fill spaces between the first conductive lines and between the cell structures in the second direction and contact the first capping layers. Second capping layers cover second side surfaces of the cell structures in the first direction and side surfaces of the second conductive lines. Second interlayer insulating layers fill spaces between the cell structures and between the second conductive lines in the first direction and contact the second capping layers. The first and second interlayer insulating layers have different carbon contents.

公开(公告)号：US20210050522A1

公开(公告)日：2021-02-18

申请号：US16746258

申请日：2020-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeho JUNG ,  Youngmin KO ,  Jonguk KIM ,  Kwangmin PARK ,  Dongsung CHOI

IPC: H01L45/00 ,  H01L27/24

Abstract: A method of fabricating a memory device includes forming word lines and cell stacks with gaps between the cell stacks, forming a lower gap-fill insulator in the gaps, forming an upper gap-fill insulator on the lower gap-fill insulator, curing the lower gap-fill insulator and the upper gap-fill insulator to form a gap-fill insulator, and forming bit lines on the cell stacks and the gap-fill insulator. The lower gap-fill process may be performed using a first source gas that includes first and second precursors, and the upper gap-fill process may be performed using a second source gas that includes the first and second precursors, a volume ratio of the first precursor to the second precursor in the first source gas may be greater than 15:1, and a volume ratio of the first precursor to the second precursor in the second source gas may be less than 15:1.