公开(公告)号：US20250126854A1

公开(公告)日：2025-04-17

申请号：US18989332

申请日：2024-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun PARK ,  Kye-hyun BAEK ,  Yong-ho JEON ,  Cheol KIM ,  Sung-il PARK ,  Yun-il LEE ,  Hyung-suk LEE

IPC: H10D62/10 ,  H10D30/01 ,  H10D84/01 ,  H10D84/03 ,  H10D84/83

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

公开(公告)号：US20220077285A1

公开(公告)日：2022-03-10

申请号：US17528251

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyun PARK ,  Kye-hyun BAEK ,  Yong-ho JEON ,  Cheol KIM ,  Sung-il PARK ,  Yun-il LEE ,  Hyung-suk LEE

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.