公开(公告)号：US20220384450A1

公开(公告)日：2022-12-01

申请号：US17734436

申请日：2022-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul KIM ,  Youngsang LEE ,  Yunchul SHIN ,  Donghoon HAN

IPC: H01L27/108

Abstract: An integrated circuit device includes a substrate including an active region defined by a device isolation layer, the substrate defining a gate trench extending across the active region, a gate dielectric layer conformally covering an inner surface of the gate trench, and a gate electrode filling the gate trench on the gate dielectric layer. The gate electrode is composed of crystal grains of a single metal, and a diagonal length of at least one of the crystal grains is greater than a height of the active region that is in contact with the gate electrode.