公开(公告)号：US20240162257A1

公开(公告)日：2024-05-16

申请号：US18388277

申请日：2023-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunhyeok KIM ,  Hwanwoong KIM ,  Hyuncheol KIM

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor including a substrate having a pixel region, a floating diffusion region in the pixel region of the substrate, a plurality of photoelectric conversion regions around the floating diffusion region in the substrate, a plurality of transmission gates adjacent to the plurality of photoelectric conversion regions, respectively, each including a first buried gate extending to the inside of the substrate, a second buried gate apart from the first buried gate and extending to the inside of the substrate, and a gate connection between the first buried gate and the second buried gate, and a plurality of spacers each on at least parts of side walls of each of the plurality of transmission gates, wherein each of the plurality of spacers is between the side walls of each of the plurality of transmission gates and the floating diffusion region in a plan view.

公开(公告)号：US20230207583A1

公开(公告)日：2023-06-29

申请号：US17946271

申请日：2022-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunhyeok KIM ,  Jungbin Yun ,  Hongsuk Lee

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14607 ,  H04N5/369 ,  H01L27/14645

Abstract: An image sensor includes: a pixel array including a plurality of pixels; and a logic circuit acquiring a pixel signal from the plurality of pixels, wherein each of the plurality of pixels includes a photodiode and a pixel circuit region disposed on the photodiode, wherein the pixel array includes a plurality of pixel groups each having four or more pixels, among the plurality of pixels, adjacent to each other in the first direction and the second direction, wherein the pixel circuit region in each of the plurality of pixel groups includes a plurality of transistors, wherein at least one of the plurality of transistors is a driving transistor including a first active region, a second active region, and a gate structure disposed between the first active region and the second active region in a third direction intersecting the first direction and the second direction.