公开(公告)号：US10861996B2

公开(公告)日：2020-12-08

申请号：US16232489

申请日：2018-12-26

申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

发明人： Sanghyun Jo ,  Heejun Yang ,  Geunwoo Hwang ,  Hyeonjin Shin

IPC分类号： H01L31/112 ,  H01L31/109 ,  H01L31/032 ,  H01L31/0224 ,  G06K9/00 ,  H01L31/101 ,  H01L31/113

摘要： A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.

公开(公告)号：US20190252569A1

公开(公告)日：2019-08-15

申请号：US16232489

申请日：2018-12-26

申请人： Samsung Electronics Co., Ltd. ,  Research and Business Foundation Sungkyunkwan University

发明人： Sanghyun Jo ,  Heejun Yang ,  Geunwoo Hwang ,  Hyeonjin Shin

IPC分类号： H01L31/109 ,  H01L31/032 ,  H01L31/112 ,  H01L31/0224

CPC分类号： H01L31/109 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/1129

摘要： A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.