公开(公告)号：US20230012899A1

公开(公告)日：2023-01-19

申请号：US17951474

申请日：2022-09-23

申请人： Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Keunwook SHIN ,  Kibum KIM ,  Hyunmi KIM ,  Hyeonjin SHIN ,  Sanghun LEE

IPC分类号： H01L23/538 ,  H01L29/16 ,  H01L23/532 ,  H01L23/00

摘要： An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.

公开(公告)号：US20200350252A1

公开(公告)日：2020-11-05

申请号：US16861891

申请日：2020-04-29

申请人： Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Keunwook SHIN ,  Kibum KIM ,  Hyunmi KIM ,  Hyeonjin SHIN ,  Sanghun LEE

IPC分类号： H01L23/538 ,  H01L29/16 ,  H01L23/00 ,  H01L23/532

摘要： An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.