公开(公告)号：US20020094494A1

公开(公告)日：2002-07-18

申请号：US10035438

申请日：2002-01-04

Applicant: Samsung SDI Co,. Ltd.

Inventor： Deuk-seok Chung ,  Jong-min Kim ,  Shang-hyeun Park ,  Nae-sung Lee ,  Hang-woo Lee

IPC: G03F007/00

CPC classification number: B82Y10/00 ,  H01J9/022 ,  H01J2201/30469

Abstract: A method of manufacturing a field emitter array using carbon nanotubes, low voltage field emission material, is provided. The method includes the steps of (a) forming a conductive thin film layer on the top of a transparent substrate having a transparent electrode and exposing a predetermined portion of the transparent electrode; (b) forming an opaque thin film layer on the exposed predetermined portion of the transparent electrode; (c) depositing an insulation material on the entire top surface of the transparent substrate and removing the insulation material from the top surfaces of the conductive thin film layer and the opaque thin film layer, thereby forming an insulation layer; (d) forming a gate layer on the top of the insulation layer; and (e) removing the opaque thin film layer and forming carbon nanotube tips on the top of the exposed transparent electrode. Accordingly, the triode carbon nanotube field emitter array can be easily manufactured using a small number of mask layers and without using a special aligner.

Abstract translation: 提供了使用碳纳米管制造场致发射体阵列的方法，即低电压场发射材料。 该方法包括以下步骤：（a）在具有透明电极的透明基板的顶部上形成导电薄膜层，并暴露出透明电极的预定部分; （b）在所述透明电极的暴露的预定部分上形成不透明薄膜层; （c）在透明基板的整个顶表面上沉积绝缘材料，并从导电薄膜层和不透明薄膜层的顶表面去除绝缘材料，由此形成绝缘层; （d）在绝缘层的顶部上形成栅极层; 和（e）去除不透明薄膜层并在暴露的透明电极的顶部上形成碳纳米管尖端。 因此，可以使用少量掩模层容易地制造三极管碳纳米管场发射极阵列，并且不使用特殊的对准器。