公开(公告)号：US5843842A

公开(公告)日：1998-12-01

申请号：US697880

申请日：1996-09-03

申请人： Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

发明人： Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

IPC分类号： H01L23/52 ,  H01L21/027 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L21/441

CPC分类号： H01L21/76843 ,  H01L21/0276 ,  H01L21/28512 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53271 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole) and a first conductive layer formed on the insulating layer which completely fills the opening. The first conductive layer does not produce any Si precipitates in a subsequent heat-treating step for filling the opening with the first conductive layer material. The semiconductor device may further include a second conductive layer having a planarized surface on the first conductive layer. This improves subsequent photolithography. An anti-reflective layer may be formed on the second conductive layer for preventing an unwanted reflection during a photo lithography process. The semiconductor device preferably includes a diffusion barrier layer under the first conductive layer and on the semiconductor substrate, on the insulating layer, and on the inner surface of the opening which prevents a reaction between the first conductive layer and the semiconductor substrate or the insulating layer. A method for forming the wiring layer is also disclosed. Providing a semiconductor device with the wiring layer reduces the leakage current by preventing Al spiking. Since the first conductive layer undergoes a heat-treatment step at a temperature below the melting point, while flowing into the opening and completely filling it with the first conductive layer material, no void is formed in the opening. Good semiconductor device reliability is ensured in spite of the contact hole being less than 1 .mu.m in size and having an aspect ratio greater than 1.0.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔）的绝缘层和形成在绝缘层上的完全填充开口的第一导电层。 在随后的用第一导电层材料填充开口的热处理步骤中，第一导电层不产生任何Si沉淀物。 半导体器件还可以包括在第一导电层上具有平坦化表面的第二导电层。 这改善了随后的光刻。 可以在第二导电层上形成抗反射层，以防止在光刻工艺期间不期望的反射。 半导体器件优选地包括在第一导电层下方，半导体衬底上的绝缘层上的扩散阻挡层，以及防止第一导电层与半导体衬底或绝缘层之间的反应的开口内表面 。 还公开了一种用于形成布线层的方法。 提供具有布线层的半导体器件通过防止Al尖峰来减少漏电流。 由于第一导电层在低于熔点的温度下经历热处理步骤，同时流入开口并用第一导电层材料完全填充，因此在开口中不形成空隙。 尽管接触孔的尺寸小于1μm，并且纵横比大于1.0，确保良好的半导体器件的可靠性。

公开(公告)号：US5355020A

公开(公告)日：1994-10-11

申请号：US910894

申请日：1992-07-08

申请人： Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

发明人： Sang-in Lee ,  Jeong-in Hong ,  Jong-ho Park

IPC分类号： H01L23/52 ,  H01L21/027 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/0276 ,  H01L21/28512 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53271 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via) and a first conductive layer formed on the insulating layer which completely fills the opening. The first conductive layer does not produce any Si precipitates in a subsequent heat-treating step for filling the opening with the first conductive layer material. The semiconductor device may further include a second conductive layer having a planarized surface on the first conductive layer. This improves subsequent photolithography. An anti-reflective layer may be formed on the second conductive layer for preventing an unwanted reflection during a photo lithography process. The semiconductor device preferably includes a diffusion barrier layer under the first conductive layer and on the semiconductor substrate, on the insulating layer, and on the inner surface of the opening which prevents a reaction between the first conductive layer and the semiconductor substrate or the insulating layer. A method for forming the wiring layer is also disclosed. Providing a semiconductor device with the wiring layer reduces the leakage current by preventing an Al spiking. Since the first conductive layer undergoes a heat-treatment step at a temperature below the melting point, while flowing into the opening and completely filling it with the first conductive layer material, no void is formed in the opening. Good semiconductor device reliability is ensured in spite of the contact hole being less than 1 .mu.m in size and having an aspect ratio greater than 1.0.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层和形成在绝缘层上的完全填充开口的第一导电层。 在随后的用第一导电层材料填充开口的热处理步骤中，第一导电层不产生任何Si沉淀物。 半导体器件还可以包括在第一导电层上具有平坦化表面的第二导电层。 这改善了随后的光刻。 可以在第二导电层上形成抗反射层，以防止在光刻工艺期间不期望的反射。 半导体器件优选地包括在第一导电层下方，半导体衬底上的绝缘层上的扩散阻挡层，以及防止第一导电层与半导体衬底或绝缘层之间的反应的开口内表面 。 还公开了一种用于形成布线层的方法。 提供具有布线层的半导体器件通过防止Al尖峰来减少泄漏电流。 由于第一导电层在低于熔点的温度下经历热处理步骤，同时流入开口并用第一导电层材料完全填充，因此在开口中不形成空隙。 尽管接触孔的尺寸小于1μm，纵横比大于1.0，仍然保证良好的半导体器件的可靠性。