摘要:
Repeaters are arranged at arbitrary positions to substantially improve transmission speed of a signal. In the semiconductor integrated circuit device 1, repeater regions 10 where repeaters are provided as relay points for wiring are provided in the central parts of the core power source regions 2, 3 and 5, on the left side of the core power source regions 4 to 8 and at the upper and lower parts of the semiconductor integrated circuit device 1. A power switch region for repeater 11 is formed so as to surround the core power source regions 2 to 8 and the repeater regions 10. The power source lines of the reference potential connected to the repeater regions 10 are laid out at equally spaced intervals throughout the core power source regions 2 to 8, which enables the repeater regions 10 to be flexibly laid out. This permits the repeaters to be more effectively arranged, which improves the performances of semiconductor integrated circuit device 1.
摘要:
Repeaters are arranged at arbitrary positions to substantially improve transmission speed of a signal. In the semiconductor integrated circuit device 1, repeater regions 10 where repeaters are provided as relay points for wiring are provided in the central parts of the core power source regions 2, 3 and 5, on the left side of the core power source regions 4 to 8 and at the upper and lower parts of the semiconductor integrated circuit device 1. A power switch region for repeater 11 is formed so as to surround the core power source regions 2 to 8 and the repeater regions 10. The power source lines of the reference potential connected to the repeater regions 10 are laid out at equally spaced intervals throughout the core power source regions 2 to 8, which enables the repeater regions 10 to be flexibly laid out. This permits the repeaters to be more effectively arranged, which improves the performances of semiconductor integrated circuit device 1.
摘要:
Repeaters are arranged at arbitrary positions to substantially improve transmission speed of a signal. In the semiconductor integrated circuit device 1, repeater regions 10 where repeaters are provided as relay points for wiring are provided in the central parts of the core power source regions 2, 3 and 5, on the left side of the core power source regions 4 to 8 and at the upper and lower parts of the semiconductor integrated circuit device 1. A power switch region for repeater 11 is formed so as to surround the core power source regions 2 to 8 and the repeater regions 10. The power source lines of the reference potential connected to the repeater regions 10 are laid out at equally spaced intervals throughout the core power source regions 2 to 8, which enables the repeater regions 10 to be flexibly laid out. This permits the repeaters to be more effectively arranged, which improves the performances of semiconductor integrated circuit device 1.
摘要:
Repeaters are arranged at arbitrary positions to substantially improve transmission speed of a signal. In the semiconductor integrated circuit device 1, repeater regions 10 where repeaters are provided as relay points for wiring are provided in the central parts of the core power source regions 2, 3 and 5, on the left side of the core power source regions 4 to 8 and at the upper and lower parts of the semiconductor integrated circuit device 1. A power switch region for repeater 11 is formed so as to surround the core power source regions 2 to 8 and the repeater regions 10. The power source lines of the reference potential connected to the repeater regions 10 are laid out at equally spaced intervals throughout the core power source regions 2 to 8, which enables the repeater regions 10 to be flexibly laid out. This permits the repeaters to be more effectively arranged, which improves the performances of semiconductor integrated circuit device 1.